| 摘要 |
PURPOSE:To reduce the effective mass of carriers at the top of a valence band. CONSTITUTION:Barrier layers 10 and well layers 12 are laminated alternately, and an active layer having a quantum-well structure is constituted. Then, a band discontinuity amount between a valence band with reference to light holes of the barrier layers 10 and a valence band with reference to light holes of the well layers 12 is set at zero. In addition, a band discontinuity amount between a valence band with reference to heavy holes of the barrier layers 10 and a valence band with reference to heavy holes of the well layers 12 is set at a magnitude which forms a quantum well with reference to the heavy holes. Thereby, irrespective of the band structure of the light holes and of the heavy holes, a band mixing effect between the holes can be reduced. |
