| 摘要 |
PURPOSE:To enable memory cell structure which can secure enough capacity even for the further reduction of the occupied are a of a memory cell by interposing a pad electrode consisting of a conductor layer whose height from an electrode is made higher than a storage node electrode. CONSTITUTION:A bit line 14 is made in the layer above a capacitor, and besides the bit line 14 is connected to the other of source or drain regions 6a and 6b through a pad electrode 10P being shelved up to the upper side of a storage electrode 10. Since the pad electrode 10P higher than the storage electrode 10 is made this way, even if the capacitor is made higher, a pad electrode 10P further higher than it can be made. Hereby, the retreat of the plate at processing of a plate electrode can be advanced not only in lateral direction but also in vertical direction, so the processing keeping such a margin that it is separated enough from the bit line contact area and that it does not expose the adjacent storage node electrode 10 can be performed. |
