| 摘要 |
PURPOSE:To obtain an optical semiconductor device in which a response speed and an amplification action are improved by a method wherein second reflecting mirrors are installed between a plurality of light-emitting layers on a first reflecting mirror and a third reflecting mirror is installed on the light-emitting layer as the uppermost layer. CONSTITUTION:A multilayer-film reflecting mirror 1 which is constituted of an AlAs/GaAs multilayer film, an AlGaAs spacer layer S2, a multilayer-film reflecting mirror 2 which is constituted of an AlAs/GaAs multilayer film, an AlGaAs spacer layer $1 and a multilayer-film reflecting mirror 3 which is constituted of an AlAs/GaAs multilayer film are formed sequentially on a GaAs substrate 4. An InGaAs strain quantum-well layer A1 as a first light-emitting layer and an InGaAs strain quantum-well layer A2 as a second light-emitting layer are inserted into individual central parts of the spacer layers S1, S2. Thicknesses of the AlAs layer and the GaAs layer which constitute the multilayer-film reflecting mirrors 1, 2, 3 are set respectively at 84nm and 74nm. Thereby, it is possible to realize an optical semiconductor device which is excellent from the viewpoint of a response speed and an amplification action. |
