| 摘要 |
PURPOSE:To provide a bonded quantum dot element as a state-of-the-art electronic device using charge energy of a single electron whereby it is possible to achieve high-speed operation, lower power consumption and large-scale integration, and an AND gate element. CONSTITUTION:Plural quantum dots are formed, which are connected to one another via tunnel barriers 22 to 25 and which are connected with gate electrodes 19 to 21, respectively. By causing the capacitance between the quantum dot and the gate electrode to be greater than the capacitances between the quantum dots and between the quantum dot and a lead wire, interaction of electrostatic potential between the quantum dots can be reduced. |
