发明名称 METALIZING METHOD OF SEMICONDUCTOR DEVICE
摘要 forming a semiconductor substrate device and depositing an insulating film in front side; selectively eliminating the insulating film and forming the contact; forming a plug at the contact part; depositing a photoresist and eliminating the photoresist at the wiring pattern part; depositing multi-layer wiring material; and etching back until the photoresist appears and eliminating the photoresist.
申请公布号 KR950010857(B1) 申请公布日期 1995.09.25
申请号 KR19920019175 申请日期 1992.10.19
申请人 LG SEMICONDUCTOR CO., LTD. 发明人 JON, JONG - YONG
分类号 H01L21/30;(IPC1-7):H01L21/30 主分类号 H01L21/30
代理机构 代理人
主权项
地址