发明名称 |
METALIZING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
forming a semiconductor substrate device and depositing an insulating film in front side; selectively eliminating the insulating film and forming the contact; forming a plug at the contact part; depositing a photoresist and eliminating the photoresist at the wiring pattern part; depositing multi-layer wiring material; and etching back until the photoresist appears and eliminating the photoresist.
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申请公布号 |
KR950010857(B1) |
申请公布日期 |
1995.09.25 |
申请号 |
KR19920019175 |
申请日期 |
1992.10.19 |
申请人 |
LG SEMICONDUCTOR CO., LTD. |
发明人 |
JON, JONG - YONG |
分类号 |
H01L21/30;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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