| 摘要 |
A multiple layer semiconductor optical modulator (6) of the electro-absorption type that controls the coupling of optical radiation through the modulator, that comprises at least a waveguide core layer (56), an input facet (12) and an output facet (42) for transmission of the optical radiation through the waveguide layer (56), and at least one cladding layer (54, 58 and 60) that is ribbed for lateral confinement of the optical radiation that passes through the waveguide core layer (56), and further comprises a metallic modulation input signal layer over a selected portion of the at least one rib to define a modulation region (18) along the at least one rib and at least one metallic bias input signal layer from the vicinity of the plane of at least one of the facets to the vicinity of the modulation input signal layer to define at least one isolation region (16 and 34) along the at least one rib.
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