WORD LINE DRIVING CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE

摘要

a pulse generator for outputting a series of pulse columns in response to transfer of a row address signal; a high voltage sensor for sensing a power supply voltage in response to a write control signal applied from an external device, and for outputting a first level of high voltage sensing signal, if the power supply voltage is lower than a preset sense level but for outputting a second level of high voltage sensing signal, if the power supply voltage is higher than the preset sense level; a pulse column selector connected to an output node of the pulse generator, for passing the pulse columns, if the high voltage sensing signal is in the first level, and for cutting the pulse columns, if the high voltage sensing signal is in the second level; and an activating signal output unit for combining an output of the pulse generator and the row address signal to output the combined result as a word line activation signal.