发明名称 |
Ion implanter and method for implanting an ion beam. |
摘要 |
<p>An ion implanter (56) consists of: a) an oscillator (58) for providing a fixed frequency y-signal; b) a modulator (54) for providing a variable x-signal; c) a scan amplifier (60) adapted for buffering and phase-modulating the y signal into two y scan signals of opposing phase, and for buffering and phase-modulating the x signal into two x scan signals of opposing phase; and d) a pair of x-deflectors (62a,62b) connected to receive x-scan signals and a pair of y-deflectors (62c,62d) connected to receive y-scan signals. More specifically, an ion implanter as above wherein the modulator comprises: e) first and second waveform generators (64,66) connected in series; and f) input and output to second waveform generator, wherein the input receives a triangular wave of fixed frequency and the output produces the x-signal having a frequency which varies in direct proportion to the voltage of the triangular wave. Thus frequency-modulated movement of the ion-beam across the wafer is achieved. Also claimed is a method for ion-implanting a wafer using the appts. cited above.</p> |
申请公布号 |
EP0673054(A1) |
申请公布日期 |
1995.09.20 |
申请号 |
EP19950301339 |
申请日期 |
1995.03.02 |
申请人 |
ADVANCED MICRO DEVICES INC. |
发明人 |
DOLMAN, DENVER L.;LE, VAN;FRIEDE, DONALD L. |
分类号 |
C23C14/48;G21K5/04;H01J37/147;H01J37/317;H01L21/265;(IPC1-7):H01J37/147 |
主分类号 |
C23C14/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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