CHARGE PUMPING CIRCUIT OF SEMICONDUCTOR ELEMENT

摘要

a first charge pumping stage and a second charge pumping stage. The first charge pumping stage is comprised of a capacitance structure of a first MOS transistor whose gate is connected to a first node and a second node connected commonly to drain and source is connected to a first pulse signal, a capacitance structure of second MOS transistor whose gate is connected to a third node and a fourth node connected commonly to drain and source is connected to the first pulse signal, a third MOS transistor, a fourth MOS transistor and a fifth MOS transistor. The second charge pumping stage is comprised of a capacitance structure of a sixth MOS transistor whose gate is connected to a fifth node and a sixth node connected commonly to drain and source is connected to a second pulse signal, a capacitance structure of seventh MOS transistor whose gate is connected to a seventh node and an eighth node connected commonly to drain and source is connected to the second pulse signal, an eighth MOS transistor, a ninth MOS transistor and a tenth MOS transistor.