发明名称 Overvoltage protection device in integrated circuits.
摘要 The integrated circuit structure includes two conducting elements (42,60) separated by a gap (68) which is filled with gas. A conducting column (60) is mounted by its base above a semiconductor substrate (21). The first conductor is separated from the column (60) by a gap. An insulating material (34,36) defines a cavity which contains a part of the lateral surface of the column (60) and a part facing the surface of the conductor (42). Connections (66,62) are provided to both the column (60) and the conductor (42).
申请公布号 EP0673068(A1) 申请公布日期 1995.09.20
申请号 EP19950410014 申请日期 1995.03.10
申请人 STMICROELECTRONICS S.A. 发明人 KALNITSKY, ALEXANDER
分类号 H01L21/764;H01L21/3205;H01L21/822;H01L21/8234;H01L23/52;H01L27/02;H01L27/04;H01L27/088;H01L29/78 主分类号 H01L21/764
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