| 摘要 |
An apparatus is described as a source of a plasma for remote, or downstream, processing with a variety of applications. The plasma is produced in a gas by cooperation between a magnetic field of the proper strength and microwave energy of the proper frequency. The microwave field enters a chamber through a window of microwave transparent material to encounter a magnetic field formed by a permanent magnet placed on the opposite side of the chamber and designed such that the direction of propagation of the microwave field is parallel with the magnetic field lines in the center of the chamber. A gas or gas mixture is introduced to the chamber and the plasma effluent is guided by gas pressure gradients to a workpiece located downstream from the source chamber. With the proper choice of gases, pressure, and power the workpiece or substrate can be effected by deposition of a thin film, etching of the substrate surface, or otherwise modifying the surface or body of the workpiece. The areas of technology intended to benefit from this invention include, but are not limited to semiconductors, superconductors, optical thin films, plasma sterilization, as well as other industrial methods involving surface treatment and modifications.
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