Method for forming a via contact hole of a semiconductor device

摘要

In the formation of a via contact hole of a semiconductor device, a polymer layer on the sidewall of a photoresist layer and via contact hole is effectively removed and the short of the via contact hole does not occur. For achieving such purpose, a wafer is cleaned in deionized water being added with CO2 gas during the process used for forming the via contact hole, and a protecting film (Al2O3) is formed on a metal layer. Thereafter, since the polymer layer and a part of the photoresist layer is removed, the metal layer is not eroded and the polymer layer is completely removed.