Three-dimensional static random access memory device for avoiding disconnection among transistors of each memory cell

摘要

A gate electrode layer constituting a gate of a P-channel type MOS transistor formed on an upper layer is made of P-type polycrystal silicon and is connected to a diffusion region of an N-channel type MOS transistor formed on a lower layer by extending an end of the gate electrode layer into a contact hole above the diffusion region. Therefore, an aspect ratio of the contact hole becomes small and a coverage of a wiring for connecting the gate of the P-channel type MOS transistor and the diffusion region of the N-channel type MOS transistor is improved, so that the wiring is not snapped.