| 摘要 |
PURPOSE:To prevent mutual diffusion of Ni in an electrode and Si and C in SiC by laminating a conductive metal layer where at least tungsten layer side is a nickel layer via the tungsten layer on n-type silicon carbide substrate and then performing heat treatment for forming the electrode. CONSTITUTION:After a W layer 2 is subjected to sputter deposition on an n-type SiC substrate 1 by the RF magnetron sputter method, alloying treatment is performed in vacuum to form an electrode. The alloy of W and Si is generated only after heat treatment temperature reaches 100 deg.C and Ni is evaporated when the temperature exceeds 1300 deg.C. By providing the W layer between Ni layer and SiC substrate and performing alloying treatment, mutual diffusion between Ni and Si/C can be prevented, thus obtaining a stable electrode of an SiC electronic device at a high temperature.
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