Semiconductor device having conductive plug projecting from contact hole and connected at side surface thereof to wiring layer

摘要

A semiconductor device adapted for reduction in size and increasing density is disclosed. The semiconductor device comprises an insulating layer having therein a contact hole in which a first conductive layer or a contact electrode is deposited for connecting a semiconductor active region with an overlying second conductive layer. The contact electrode has a top portion protruding from the insulating layer and a side surface in contact with the second conductive layer for increasing a contact area between the contact electrode and the second conductive layer. The top surface of the contact electrode may be provided with an insulating layer between the top surface and the interconnection wiring layer formed from the second conductive layer in order to avoid etching of the contact electrode and underlying semiconductor active region during etching of the second conductive layer, even in the case of misalignment of the contact electrode with the interconnection wiring layer.