INTERNAL SOURCE VOLTAGE GENERATING CIRCUIT WITH TEMPERATURE DEPENDENT CHARACTER

摘要

The internal power supply voltage generating circuit of a semiconductor memory device having a burn-in voltage detector comprises at least four series-connected voltage drop elements which are connected to an external power supply voltage and perform a temperature compensating operation using the threshold voltage of an MOS transistor; and a comparator for inputting a predetermined reference signal and differentially-amplifying it, whereby the burn-in voltage detector is triggered at a lower voltage if the temperature rises and is triggered at a higher voltage if the temperature lowers by the threshold voltage characteristic of the voltage drop elements.