| 摘要 |
PURPOSE:To provide a semiconductor device in which a gate wiring layer can be formed with high precision the element area of a MOS transistor and its manufacturing method. CONSTITUTION:An element separating insulating film 2 is formed on a silicon substrate 1 and a single-crystal silicon layer 10 is formed on an element area by selective epitaxial growth so that the upper surface of the silicon layer 10 can become higher than the upper surface of the insulating film 2. Therefore, the over exposure of the element area to the reflected light of exposing light rays from the edge section of the insulating film 2 can be prevented when a photoengraving process is performed at the time of forming a gate wiring layer. |
