| 摘要 |
PURPOSE:To provide an element using a Si type material which has a high light emission intensity at a near infrared range. CONSTITUTION:On a Si substrate 1, thin films of Si-Ge mixed crystal layer 2 and Si layer 3 are epitaxially grown in this order the other to form a superlattice structure 4. After forming it, it is heat-treated to increase the light emission intensity. When a voltage is applied to electrodes 6 and 7, electrons and holes are recombined in the superlattice structure to emit a light at a near infrared range. Because of the superlattice structure, the emission is very strong. This light is taken up through a filter 8 to obtain a near infrared light emitting element. |
