| 摘要 |
<p>PURPOSE:To effectively protect a gate insulation film by eliminating breakdown of a gate insulation film due to static electricity by executing a rear process and an assembly process after a bonding pad shortcircuits a metal layer. CONSTITUTION:A process up to a first layer Al wiring (a surface process) is executed. Then, a second layer Al wiring is executed. All the bonding pads 22 are connected by the second layer Al layer (a shortcircuiting wiring 20 and a second layer metal wiring 24) and a part 24 of 'solid' Al is also used for reinforcement of an area around a ground wiring. Silicon nitride is deposited in a rear of a chip. In the process, a chip surface is inevitably brought into contact with a metal constituting a chamber. Therefore, when grounding of a plasma etcher is poor and a device is in some electric potential, unexpected potential differential is generated between a gate and a substrate in a conventional structure and a gate oxide film is broken. In this example, all the bonding pads 22 are surely shortcircuited by the aluminum wirings 20, 24.</p> |
