DATA OUTPUT BUFFER OF SYNCHRONOUS SEMICONDUCTOR MEMORY DEVICE

摘要

The memory device performs read/write operation according to the clock supplied from an external source, and comprises: a memory means for storing a data; a data output buffer means for outputting the stored data in response to a control signal of the data output buffer; and a control signal generating means controlling the data output buffer according to an address strobe signal and a predetermined combination signal in response to a clock signal and an address strobe signal or their combination signal. The address strobe signal is either or both a row address strobe signal and a column address strobe signal.