DEPOSITION OF SILICON OXIDE FILMS USING ALKYLSILANE LIQUID SOURCES

摘要

A chemical vapor deposition process for depositing silicon dioxide comprising the steps of heating a substrate upon which deposition is desired to a temperature of from about 325.degree.C. to about 700.degree.C. in avacuum having a pressure of from about 0.1 to about 1.5 torr, and introducing a silane selected from the group consisting of alkylsilane, arylsilane and aralkylsilane wherein the alkyl-, aryl- or aralkyl- moiety comprises from 2 - 6 carbons. and oxygen or carbon dioxide into the vacuum.