发明名称 Active bias for a pulsed power amplifier
摘要 A high-power radio-frequency amplifier act on periodic pulses of RF energy. The bias is controlled for each of a bank of FETs or other amplifier devices that constitutes the main power stage. A sample of bias current is obtained during a blanking period on the front porch of the RF gating period. Quiescent drain current is measured, and stored on a sample/hold circuit. A digital signal processor provides bias values that are sent via a D/A converter to biasing circuits that add the bias levels to the input RF signal. If the bias current is above or below a desired level, the stored bias level is decreased or incremented respectively. A timing control circuit gates the sample/hold circuit and switches in advance of the biasing circuits. The timing control circuit also creates a blanking signal to apply to an attenuator to produce a null region during the first 100 microseconds of the gating signal. A thermal sensor is coupled to one or more amplifying devices for presetting the operating voltage when operation has been interrupted for a predetermined period of time.
申请公布号 US5451907(A) 申请公布日期 1995.09.19
申请号 US19940243161 申请日期 1994.05.16
申请人 ENI, DIV. OF ASTEC AMERICA, INC. 发明人 KEANE, ANTHONY R. A.;VANDEBROEK, BART C.
分类号 H03F1/30;(IPC1-7):H03F1/30;H03F3/68 主分类号 H03F1/30
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