| 摘要 |
A resistor has a resistor body (11) of polycrystalline silicon and electrical terminals (23, 15) arranged on and/or in the resistor body (11), so that a resistor portion (13) is formed between the terminals and produces the useful resistance of the resistor. The material of the resistor body is doped with dopants of both acceptor type and donor type. In order to block the charge carrier traps at grain boundaries to a sufficient degree and thereby give the resistor a good stability, also when it is exposed to different substances during the manufacture, the doping is made with donors in such a high concentration, that if only the donor atoms would be present in the material and substantially no acceptor atoms, the material would be to be considered as more or less heavily doped. In particular donor atoms are to be provided in the resistor body in a concentration of at least 3<.>10<19> cm<-3>, in the case where the material has an average grain size of 1000 ANGSTROM and phosphorus is used as a dopant of donor type. |
