MASKING METHOD USED IN SALICIDE PROCESS

摘要

A mask opening (52) used to etch exposed oxide spacer portions (37, 40) is made to not expose any parasitic oxide spacers (44) formed along an edge of the isolated silicon island (12). The desired oxide spacers (38, 39) will thus be intact to properly isolate silicide portions formed over exposed silicon and polysilicon surfaces. This process may be used during the formation of a bipolar or MOS transistor formed in an isolated silicon island (12).