| 摘要 |
A high voltage semiconductor device having an improved junction termination extension for increasing the surface breakdown junction voltage. The device comprises a semiconductor substrate (10) of a first electrical conductivity type having a major surface (24) with an edge (26). The substrate has a first impurity region (22) of a second electrical conductivity type formed therein and having a first doping concentration and a second impurity region (28) of a said second electrical conductivity type, having a second doping concentration less than the first doping concentration, formed in the substrate between the first impurity region and the edge, and a field shield plate (30) disposed on the major surface in conductive relation with the first impurity region. The first field shield plate has an outer edge which terminates above the second impurity region. <IMAGE> |
