MOS field effect transistor and method for manufacturing same.

摘要

An MOS field effect transistor is of a lightly doped drain structure. In the transistor, an insulation layer (15) is located on the side wall of a gate electrode (13). This insulation layer is formed of tantalum oxide, which has a high dielectric constant. Between this insulation layer and a drain region (D), another insulation layer (14) is formed such that it has a thickness sufficiently greater than the length of the mean free path of the hot carriers which are generated in the vicinity of the drain region.