| 摘要 |
PURPOSE:To control the period of the quantum fine wire structure by forming a semiconductor carrier confinement layer on a specific high index surface substrate using organic metallic vapor growing method. CONSTITUTION:The quantum fine wire structure is composed of a high index surface substrate 11, a semiconductor carrier confinement layer 12 as well as a lower semiconductor barrier layer 13 and an upper semiconductor barrier layer 14 holding the confinement layer 12. As the high index surface substrate 11, a GaAs (n11) substrate (where, n=any one out of 2-7) is used. At this time, the quantum fine wire structure can be formed by growing AlGaAs as the semiconductor barrier layers 13, 14, GaAs, InGaAs or GaAsSb as the semiconductor confinement layer 12. During the growing step, the period of the periodical structure can be controlled by the film thickness, growing temperature of the semiconductor carrier confinement layer 12, and the kind of applicable substrate 11. |
