DEVELOPER AND PATTERN FORMING METHOD

摘要

PURPOSE:To provide a pattern forming method using a positive type resist material for exposure with high energy beams excellent in applicability to a process. CONSTITUTION:One or more kinds of crosslinking agents selected from among hexamethylolmelamine, phenylenediamine and xylylene glycol are added to a developer contg. tetraalkylammonium hydroxide to obtain the objective developer used for a chemical amplification type positive resist material. A pattern of a chemical amplification type positive resist contg. a polyhydroxystyrene deriv. is formed through a heat treating process after exposure, a developing process using a developer obtd. by adding a crosslinking agent to an aq. alkali soln. and a deihydrating and baking process. Irradiation with far UV may be carried out after the development or development with only an aq. alkali soln. and processing with a soln. contg. a crosslinking agent may be carried out. The deformation of the formed pattern during etching can be inhibited.