发明名称 ESD/EOS protection circuits for integrated circuits
摘要 An ESD/EOS protection circuit 10. Trigger nMOS transistor M1 has a drain 20 connected to a voltage pad 22, a gate 24 connected to ground 26 and a source 28 connected to ground 26 through source resistor Re. Switch control nMOS transistor M2 has a drain 30, a gate 34 connected to source 28 of transistor M1, and a source 38 connected to ground 26. Current controlled switch (CCS) 40 is connected to voltage pad 22, ground 26 and drain 30 of transistor M2. CCS 40 is a bipolar pnp-based current controlled switch.
申请公布号 US5450267(A) 申请公布日期 1995.09.12
申请号 US19930040949 申请日期 1993.03.31
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 DIAZ, CARLOS H.;DUVVURY, CHARVAKA;KANG, SUNG-MO
分类号 H01L27/02;H03K17/081;(IPC1-7):H02H3/24 主分类号 H01L27/02
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