发明名称 |
ESD/EOS protection circuits for integrated circuits |
摘要 |
An ESD/EOS protection circuit 10. Trigger nMOS transistor M1 has a drain 20 connected to a voltage pad 22, a gate 24 connected to ground 26 and a source 28 connected to ground 26 through source resistor Re. Switch control nMOS transistor M2 has a drain 30, a gate 34 connected to source 28 of transistor M1, and a source 38 connected to ground 26. Current controlled switch (CCS) 40 is connected to voltage pad 22, ground 26 and drain 30 of transistor M2. CCS 40 is a bipolar pnp-based current controlled switch.
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申请公布号 |
US5450267(A) |
申请公布日期 |
1995.09.12 |
申请号 |
US19930040949 |
申请日期 |
1993.03.31 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
DIAZ, CARLOS H.;DUVVURY, CHARVAKA;KANG, SUNG-MO |
分类号 |
H01L27/02;H03K17/081;(IPC1-7):H02H3/24 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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