| 摘要 |
PURPOSE:To obtain a stabilized wiring structure by making possible electically stabilized ohmic contact. CONSTITUTION:(1) A high potential barrier which allows a flow of a tunnel current between a semiconductor material and a wiring is formed by providing a material 3 which has a work function dissociated from the semiconductor material between a semiconductor material 1 such as Si and a wiring 2 formed of a metal material. (2) Difference of work function between a semiconductor metal compound or metal material and semiconductor material is set larger than the difference of work function between wiring and semiconductor material by providing a semiconductor metal compound or metal material between semiconductor material 1 and wiring 2. (3) A wiring connection structure of a semiconductor device connecting a semiconductor material, amorphous semiconductor material, semiconductor metal compound and metal material is manufactured by conducting the ion etching using a plasma generating source as a means to form a non-single crystal semiconductor material and then removing the non-single crystal semiconductor material layer by generating hydrogen ion within the same apparatus. |
