发明名称 |
Multilayer buffer structure including II-VI compounds on a silicon substrate |
摘要 |
A layer (32) of a HgCdTe compound epitaxially contacts a buffer structure, which in turn epitaxially contacts a silicon substrate (22). The buffer structure is formed of II-VI compounds, and preferably includes at least one layer (24) of a ZnSeTe compound epitaxially contacting the silicon substrate (22) and a layer (30) of a CdZnTe compound overlying the ZnSeTe compound layer (24). The ZnSeTe compound layer (24) may be provided as a single graded layer having a composition of ZnSe adjacent to the silicon and a composition of ZnTe remote from the silicon, or as two distinct sublayers with a ZnSe sublayer (26) adjacent to the silicon substrate (22) and a ZnTe sublayer (28) remote from the silicon substrate (22).
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申请公布号 |
US5449927(A) |
申请公布日期 |
1995.09.12 |
申请号 |
US19940245147 |
申请日期 |
1994.05.16 |
申请人 |
SANTA BARBARA RESEARCH CENTER |
发明人 |
HAMILTON, JR., WILLIAM J.;JOHNSON, SCOTT M.;AHLGREN, WILLIAM L. |
分类号 |
H01L21/20;H01L21/205;H01L21/36;H01L29/225;H01L29/267;H01L31/0264;(IPC1-7):H01L29/161 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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