发明名称 |
High current MOS transistor bridge structure |
摘要 |
A high current MOS transistor integrated bridge structure includes at least two arms, each having a first and a second MOS transistor. The structure is formed on an N++ substrate forming a positive potential output terminal, and an N-type epitaxial layer. For each first transistor, an L shaped region is formed of a horizontal N+ region which is connected to the surface through an N++ vertical region. Forming a corresponding alternating current input with this region is an N type region which has within it a succession of P type regions, and a pair of N+ type regions forming a negative potential output terminal. For each second transistor, an N+ region has N++ lateral regions extending to the surface, and includes an N type region containing a succession of P type regions and a pair of N+ regions forming corresponding alternating current inputs. The first transistor of each arm is entirely contained within a P type isolation region which has P+ regions extending to the surface of the substrate.
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申请公布号 |
US5449936(A) |
申请公布日期 |
1995.09.12 |
申请号 |
US19940310214 |
申请日期 |
1994.09.21 |
申请人 |
SGS-THOMPSON MICROELECTRONICS SRL;CONSORZIO PER LA RICERCA SULLA MICROELECTRONICS NEL MEZZOGIORNO |
发明人 |
PAPARO, MARIO;AIELLO, NATALE |
分类号 |
H01L21/8238;H01L21/761;H01L27/088;H01L27/092;H01L29/78;H02M7/219;(IPC1-7):H01L29/10 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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