| 摘要 |
PURPOSE:To enable a surface input/output photoelectric fusion element, having the function as a latching and the like and a p-n-p-n structure, to perform a high speed operation in high luminous efficiency. CONSTITUTION:A semiconductor active layer 15 is provided in a p-n-p-n structure, and this active layer is sandwitched by the reflecting mirrors of semiconductor multilayer films 11 and 19. Besides, high resistance regions 30 and 31 are selectively formed in the internal part of the semiconductor layer by implanting proton, the active layer 15 on the region other than a light-emitting region is brought into a high resistance state, a conductive current path, which makes an access, is provided on a gate layer 17, and gate electrodes 28 and 29 are also provided on the gate layer 17. As a result, the luminous efficiency of the photoelectric luminous element is improved, a low threshold value can be obtained, and a high-speed switching ON and OFF operation can also be performed. |
