发明名称 |
Apparatus and method for real-time measurement of thin film layer thickness and changes thereof |
摘要 |
A new technique has been developed to measure etching or deposition rate uniformity in situ using a CCD camera which views the wafer during plasma processing. The technique records the temporal modulation of plasma emission or laser illumination reflected from the wafer; this modulation is caused by interferometry as thin films are etched or deposited. The measured etching rates compare very well with those determined by Helium-Neon laser interference. This technique is capable of measuring etching rates across 100-mm or larger wafers. It can resolve etch rate variations across a wafer or within a die. The invention can also be used to make endpoint determinations in etching operations as well as measuring the absolute thickness of thin films.
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申请公布号 |
US5450205(A) |
申请公布日期 |
1995.09.12 |
申请号 |
US19930070118 |
申请日期 |
1993.05.28 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
SAWIN, HERBERT H.;CONNER, WILLIAM T.;DALTON, TIMOTHY J.;SACHS, EMANUEL M. |
分类号 |
G01B11/06;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;H01L21/66;(IPC1-7):G01B11/06;H01L21/00 |
主分类号 |
G01B11/06 |
代理机构 |
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