| 摘要 |
The present invention provides an alternate metal virtual ground (AMG) read only memory (ROM) array formed in a silicon substrate of P-type silicon. The array includes a ROM cell matrix which is defined by a plurality of rows and a plurality of columns of ROM data storage cells. The AMG ROM array includes a plurality of parallel, spaced-apart buried N+ bit lines formed in the silicon substrate. Alternate buried N+ bit lines are contacted by a conductive metal line at two contact locations within an array segment to thereby define contacted drain bit lines of the ROM cell matrix. Each buried N+ bit line that is between two adjacent contacted drain bit lines is non-contacted. Each non-contacted bit line is segmented into a length sufficient to form the segmented source bit line for a preselected plurality of ROM data storage cells, thereby defining a column of the ROM data storage cells in the ROM segment. That is, a first column of ROM data storage cells is connected between the segmented source bit line and the first adjacent contacted drain bit line. A second column of ROM data storage cells is connected between the segmented source line and the second adjacent contacted drain bit line.
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