| 摘要 |
<p>PURPOSE:To avoid the uneven thickness of a film formed especially around the periphery of a wafer because of the turbulent flow of a process gas within a quartz tube arranged in a reactor such as CVD device etc., for surface processing of a semiconductor wafer. CONSTITUTION:Within the periphery of a top board 16 and a bottom board 17 comprising a boat 15, notch parts 16c, 17c, etc., toward the inside in the radial direction excluding the connecting parts 16a, 17a to a wafer supporting bar 8 are provided of the notch ar while equalizing the bottom diameter of the notch parts with the diameter D1 of the wafer W.</p> |
