| 发明名称 |
Method of making semiconductor device having a short gate length |
| 摘要 |
A semiconductor device having a channel region having a first and a second portion. The first and second portions of the channel region are designed so that only a small portion is substantially depleted during operation. Thus, a semiconductor device having a short gate length is fabricated.
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| 申请公布号 |
US5449628(A) |
申请公布日期 |
1995.09.12 |
| 申请号 |
US19940179642 |
申请日期 |
1994.01.07 |
| 申请人 |
MOTOROLA, INC. |
发明人 |
CAMBOU, BERTRAND F.;DAVIES, ROBERT B. |
| 分类号 |
H01L21/285;H01L21/338;H01L29/10;H01L29/812;(IPC1-7):H01L21/825 |
主分类号 |
H01L21/285 |
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