发明名称 |
MOUNTING STRUCTURE FOR FET CHIP IN MICROWAVE HYBRID INTEGRATED CIRCUIT |
摘要 |
PURPOSE:To provide the mounting structure of an FET chip with less insertion loss and reflection loss and reduced in manufacturing man-hours. CONSTITUTION:The FET chip 1 is mounted and fixed on a transmission conductor 5, the source electrode 4 of the FET chip 1 is connected to the transmission conductor 5 by a wire 6 and a drain electrode 3 is connected to a ground conductor 9 in terms of a high frequency by connecting the drain electrode 3 to a 1/4 wavelength open stub 7 attached on the dielectric substrate 8 of a strip line by the wire 13. Also, by connecting the transmission conductor 5 to the ground conductor 9 by using a high impedance line 10, the DC round of the FET chip 1 is provided. |
申请公布号 |
JPH07240609(A) |
申请公布日期 |
1995.09.12 |
申请号 |
JP19940054560 |
申请日期 |
1994.02.28 |
申请人 |
FUJITSU LTD |
发明人 |
TANAKA IWAO;NAKAJIMA KENJI |
分类号 |
H01L23/50;H01L21/06;H01L21/338;H01L21/8232;H01L27/06;H01L29/812;H01P1/15;H01P5/02;H01P5/08;(IPC1-7):H01P5/08;H01L21/823 |
主分类号 |
H01L23/50 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|