发明名称 MOUNTING STRUCTURE FOR FET CHIP IN MICROWAVE HYBRID INTEGRATED CIRCUIT
摘要 PURPOSE:To provide the mounting structure of an FET chip with less insertion loss and reflection loss and reduced in manufacturing man-hours. CONSTITUTION:The FET chip 1 is mounted and fixed on a transmission conductor 5, the source electrode 4 of the FET chip 1 is connected to the transmission conductor 5 by a wire 6 and a drain electrode 3 is connected to a ground conductor 9 in terms of a high frequency by connecting the drain electrode 3 to a 1/4 wavelength open stub 7 attached on the dielectric substrate 8 of a strip line by the wire 13. Also, by connecting the transmission conductor 5 to the ground conductor 9 by using a high impedance line 10, the DC round of the FET chip 1 is provided.
申请公布号 JPH07240609(A) 申请公布日期 1995.09.12
申请号 JP19940054560 申请日期 1994.02.28
申请人 FUJITSU LTD 发明人 TANAKA IWAO;NAKAJIMA KENJI
分类号 H01L23/50;H01L21/06;H01L21/338;H01L21/8232;H01L27/06;H01L29/812;H01P1/15;H01P5/02;H01P5/08;(IPC1-7):H01P5/08;H01L21/823 主分类号 H01L23/50
代理机构 代理人
主权项
地址