| 发明名称 |
Ferroelectric thin film element |
| 摘要 |
A ferroelectric thin film element 1 constructed by forming a MgO thin film 3 oriented in the direction (100), a lower electrode 4 composed of an alloy thin film of a Ni-Cr-Al system oriented in the direction (100), a ferroelectric thin film 5 composed of a PbTiO3 thin film oriented in the direction (111), and an upper electrode 6 in this order on a substrate composed of (100) silicon 2.
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| 申请公布号 |
US5449933(A) |
申请公布日期 |
1995.09.12 |
| 申请号 |
US19930039842 |
申请日期 |
1993.03.30 |
| 申请人 |
MURATA MFG. CO., LTD. |
发明人 |
SHINDO, SATOSHI;OGAWA, TOSHIO;SENDA, ATSUO;KASANAMI, TOHRU |
| 分类号 |
G01J1/02;G01J5/02;G01J5/34;H01L21/02;H01L21/8247;H01L29/788;H01L29/792;H01L37/02;(IPC1-7):H01L29/04;H01L27/22;H01L23/48 |
主分类号 |
G01J1/02 |
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