SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING PLASMA IMMERSION ION INJECTION

摘要

forming an electron cyclotron resonance (ECR) region by two mirror type magnetic field in ECR chamber to which a microwave is sent from a power supply source; forming a plasma to supply a reaction gas to the ECR chamber; and forming a negative potential around a wafer to apply a negative bias voltage of DC or pulse type to wafer and wafer holder of the processing chamber. The impurity ion be uniformly implanted in side wall of a trench structure, and ultra shallow junction can be formed due to high electric current and low energy.