SILICON CARBIDE-BASED MIS STRUCTURE WITH HIGH LATCH-UP RESISTANCE

摘要

The MIS structure contains an n-drift region (1), a base region (3) arranged on one surface of the drift region (1), an ion-implanted n<+> source region (2) in the base region (3), a source electrode (S) short-circuiting the base (3) and source regions (2) and a gate electrode (6) to control the resistance of a channel region (32) of the base region (3) via an insulator region (5). The base region (3) is more highly doped in an ion-implanted p<+> partial region (33) beneath the entire source region (2) than in the channel region (32).