Verfahren zur Herstellung einer nichtflüchtigen Halbleiterspeichereinrichtung,申请号DE19944410287-传众专利搜索

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发明名称	Verfahren zur Herstellung einer nichtflüchtigen Halbleiterspeichereinrichtung
摘要
申请公布号	DE4410287(C1)	申请公布日期	1995.09.07
申请号	DE19944410287	申请日期	1994.03.24
申请人	GOLDSTAR ELECTRON CO., LTD., CHEONGJU, KR	发明人	HWANG, HYUN SANG, SEOUL/SOUL, KR
分类号	H01L21/28;H01L21/8247;H01L27/115;H01L29/49;H01L29/788;H01L29/792;(IPC1-7):H01L21/824	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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