HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

a first conduction type epitaxial layer formed on a second conduction type semiconductor substrate; a gate electrode formed to interpose a gate oxide film on the epitaxial layer; a drain region formed in the epitaxial layer by doping with a first conduction type impurity; two source regions formed in the epitaxial layer by doping with the first conduction impurity, and isolated by one-side electrode of a diode; the one-side electrode of the diode of trench shape of which the inner wall is doped with a second conduction type impurity and the inside is filled with desired material; and a well formed surrounding two sources, and doped with the second conduction type impurity. Formation of p+ region to trench shape can reduce process time, control the width and the depth of the trench, and realize high integration of the semiconductor device.