| 摘要 |
PURPOSE:To improve position aligning accuracy, by removing a PSG film at a position detecting mark part and an Al film by etching, removing the position detecting mark, which is immediately used at the next process, and protecting the unused position detecting mark by photoresist. CONSTITUTION:Flattening etching of a PSG film 8 is performed by a dry process along the entire surface of a substrate so that the PSG film on an Al film 7 is approximately removed. Then, a PSG film is grown again on the entire surface of the substrate. Photoresist 10 is applied on the entire surface. Patterning of a position detecting mark part is performed. The PSG film 8 and the Al film 7 are removed by etching. Thus the structure of the position detecting mark part, in which the edge of a silicon dioxide 6 is exposed, is obtained. A resist removing process is performed along the entire surface of the substrate. In order to prevent the deformation of the shape of the stepped part at the unused-position detecting mark part other than the position detecting mark to be used, the mark part is protected by photoresist 11. |
