发明名称 |
Limited current density field effect transistor with buried source and drain |
摘要 |
A buried source and drain microwave field effect transistor which provides reduced current density and reduced electric field intensity near the transistor's surface region is disclosed. Operating life and reliability of the transistor are improved by the buried source and drain structure which locates necessary regions of high electrical field intensity and large current density well within the body of the transistor. Comparisons of the buried source and drain field effect transistor with the conventional metal semiconductor field effect transistor are disclosed and include current density, electric field intensity, voltage potentials and I-V curve comparisons. A salient steps fabrication sequence for the buried source and drain field effect transistor is also disclosed.
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申请公布号 |
US5448085(A) |
申请公布日期 |
1995.09.05 |
申请号 |
US19940289337 |
申请日期 |
1994.08.11 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE |
发明人 |
CALCATERA, MARK C.;MAY, DENNIS L. |
分类号 |
H01L21/338;H01L29/08;(IPC1-7):H01L27/085;H01L29/44;H01L29/772 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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