发明名称 Crystal article, method for producing the same and semiconductor device utilizing the same
摘要 A crystal article comprises a substrate having an insulating amorphous surface and monocrystal formed on the substrate. The monocrystal is formed by providing a primary seed in the form of a film with an area 100 mu m2 or less arranged in a desired pattern on the surface of the substrate acting as a non-nucleation surface with a small nucleation density, then subjecting the primary seed to thermal treatment to convert it to a monocrystalline seed, and subsequently subjecting the monocrystalline seed to crystal growth treatment to allow a monocrystal to grow beyond the monocrystalline seed and cover the non-nucleation surface.
申请公布号 US5447117(A) 申请公布日期 1995.09.05
申请号 US19940327804 申请日期 1994.10.24
申请人 CANON KABUSHIKI KAISHA 发明人 YONEHARA, TAKAO;YAMAGATA, KENJI;NISHIGAKI, YUJI
分类号 C30B25/02;C30B25/16;H01L21/20;(IPC1-7):C30B1/06 主分类号 C30B25/02
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