发明名称 |
Crystal article, method for producing the same and semiconductor device utilizing the same |
摘要 |
A crystal article comprises a substrate having an insulating amorphous surface and monocrystal formed on the substrate. The monocrystal is formed by providing a primary seed in the form of a film with an area 100 mu m2 or less arranged in a desired pattern on the surface of the substrate acting as a non-nucleation surface with a small nucleation density, then subjecting the primary seed to thermal treatment to convert it to a monocrystalline seed, and subsequently subjecting the monocrystalline seed to crystal growth treatment to allow a monocrystal to grow beyond the monocrystalline seed and cover the non-nucleation surface.
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申请公布号 |
US5447117(A) |
申请公布日期 |
1995.09.05 |
申请号 |
US19940327804 |
申请日期 |
1994.10.24 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
YONEHARA, TAKAO;YAMAGATA, KENJI;NISHIGAKI, YUJI |
分类号 |
C30B25/02;C30B25/16;H01L21/20;(IPC1-7):C30B1/06 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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