发明名称 |
Method for forming an amorphous silicon programmable element |
摘要 |
A method for forming an amorphous silicon programable element which requires less than about one square micron of area. The method includes the steps of forming a bottom conductor, depositing an interlayer dielectric above the bottom conductor, forming a via in the interlayer dielectric, depositing an anti-fuse layer above the bottom conductor within the via, and chemical vapor depositing a conductive plug above the anti-fuse layer and within the via. The method may additionally include the step of chemical vapor depositing a top conductor above the conductive plug.
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申请公布号 |
US5447880(A) |
申请公布日期 |
1995.09.05 |
申请号 |
US19940224609 |
申请日期 |
1994.04.05 |
申请人 |
AT&T GLOBAL INFORMATION SOLUTIONS COMPANY;HYUNDAI ELECTRONICS AMERICA |
发明人 |
LEE, STEVEN S.;FUCHS, KENNETH P.;MILLER, GAYLE W. |
分类号 |
H01L23/525;(IPC1-7):H01L21/70;H01L27/00 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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