| 摘要 |
<p>PURPOSE:To prevent short circuit between pixel electrodes and adjacent electrodes by forming grooves having a perpendicular cross section to the plane to surround a pixel electrode on an insulating substrate where pixel electrodes and gate electrodes are formed. CONSTITUTION:The thin film transistor consists of a gate electrode 2, semiconductor layer 7, source electrode 3 and drain electrode 4, and is connected to a pixel electrode 5 formed adjacent to the thin film transistor through the drain electrode 4 and a contact hole 10. A groove 13 is formed around the pixel electrode 5 and the groove surrounding the pixel electrode 5 on the insulating substrate 12 has a perpendicular cross section to the plane. Or, the depth of the groove 13 is specified to 3 times or more as the thickness of the pixel electrode 5, and the width of the groove 13 is smaller than the depth of the groove 13. Thereby, even when an ITO film of the pixel electrode 5 is spread toward the adjacent electrode due to failure of etching, the film is cut in the groove 13 to avoid short circuit with the pixel electrode 5.</p> |
