Screening of conductors and contacts on microelectronic devices

摘要

A method is disclosed for testing or screening metal or polysilicon conductors and contacts on microelectronic devices that it uses a modified design layout for individual logic gates to enable high current density testing of all such elements used in the final functional circuit. The method uses a special metal pattern adding metal conductor paths to enable high current testing of normal conductors and contacts at an intermediate point during fabrication. The metal layer is patterned a second time to remove the high current paths and enable functional operation. This allows burn-in and screen testing to be performed at higher current densities than would otherwise be possible.