| 发明名称 |
Breakdown diode structure |
| 摘要 |
A high voltage diode having a field plate and substrate separated from a high impurity concentration region by dielectric layers and biased to deplete the high impurity concentration region therebetween before critical field for avalanche is reached for the region.
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| 申请公布号 |
US5448100(A) |
申请公布日期 |
1995.09.05 |
| 申请号 |
US19920919001 |
申请日期 |
1992.07.23 |
| 申请人 |
HARRIS CORPORATION |
发明人 |
BEASOM, JAMES D. |
| 分类号 |
H01L29/06;H01L29/40;H01L29/732;H01L29/78;H01L29/861;(IPC1-7):H01L27/04 |
主分类号 |
H01L29/06 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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